HPD module, SiC silicon carbide module, domestic power module, 1700V, 1200V, 650V, 1000A, 800A, 400A

AlN+AlSiC散熱，最高工作結溫175℃；第三代模塊寄生電感低于10nH，比現有模塊小50%以上，降低開關損耗。

型號：ASC800N650HPD,ASC400N650HPD,ASC800N1200HPD,ASC400N...

Econodual module, SiC silicon carbide module, domestic power module 1700V, 1200V, 650V, 200A, 100A

采用真空回流焊工藝，Cu底板+低熱值AlN絕緣陶瓷，最高工作結溫175℃；功率密度高,適用高溫、高頻應用，超低損耗；集成NTC溫度傳...

型號：ASC800N650MED,ASC400N650MED,ASC800N1200MED,ASC400N...

EasyPIM module, SiC silicon carbide module, domestic power module 1200V, 650V, 200A, 100A

采用先進的真空回流焊工藝，Al2O3絕緣陶瓷，最高工作結溫150℃；高功率密度，低寄生電感，低開關損耗；適用高溫、高頻應用；

型號：ASC200N650EP,ASC200N1200EP,ASC100N1200EP

EasyPACK module, SiC silicon carbide module, domestic power module 1200V, 1700V, 650V

采用先進的真空回流焊工藝，Al2O3絕緣陶瓷，最高工作結溫150℃；高功率密度，低寄生電感，低開關損耗；適用高溫、高頻應用；集...

型號：ASC300N650MEP2B,ASC300N1200MEP2B,ASR9N1200MEP2B,AS...

DWC3 module, SiC silicon carbide module, domestic power module 1200V, 1700V, 650V

1. 采用真空回流焊工藝，AlSiC底板+低熱值AlN絕緣陶瓷，最高工作結溫175℃；2. 第三代模塊寄生電感低于10nH，比現有模塊小50%以上...

型號：ASC600N650MD3,ASC400N650MD3,ASC700N1200MD3,ASC300N...

DCS12 module, SiC silicon carbide module, domestic power module 1200V, 1700V, 650V

1. 采用單面水冷+模封工藝，最高工作結溫175℃； 2. 功率密度高，適用高溫、高頻應用，超低損耗； 3. 集成NTC溫度傳感器，易于系...

型號：ASC800N650DCS12,ASC400N650DCS12,ASC800N1200DCS12,A...

62mm module, SiC silicon carbide module, domestic power module 1200V 1700V 400A 200A

1. 采用全焊片工藝，Cu底板+低熱值AlN絕緣陶瓷； 2. 高功率密度，低寄生電感，低開關損耗； 3. 適用高溫、高頻應用。

型號：ASC400N1200ME3F,ASC100N1200ME3,ASR6N1200ME3,ASC400...

34mm module, SiC silicon carbide module, domestic power module 1200V 1700V 300A

1. 采用全焊片工藝，Cu底板+低熱值AlN絕緣陶瓷； 2. 高功率密度，低寄生電感，低開關損耗； 3. 適用高溫、高頻應用。

型號：ASC300N1200ME2,ASR9N1200ME2,ASC100N1200ME2,ASR45N1...

ASC50N3300MT4, ASC20N3300MT43300V Domestic SiC Silicon Carbide MOS Tube Vehicle Grade 60A 20A

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASC50N3300MT4,ASC20N3300MT4

ASC100N1700,1700V 100A 40A 5A

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASC100N1700MT3,ASC100N1700MT4,ASC40N1700MT3,ASC40N...

ASC200N12001200V domestic SiC silicon carbide MOS tube vehicle specification grade 200A 100A 60A 30A

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASC200N1200,ASC100N1200,ASC60N1200,ASC30N1200,ASC2...

ASR320N650MD, Domestic SiC silicon carbide MOS tube 650V 8A automotive grade PDFN

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASR320N650MD56,ASR320N650MD88

ASR90N650MD88PB, Domestic SiC silicon carbide MOS tube 650V 25A automotive grade PDFN8 * 8

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASR90N650MD88PB

ASC30N650, Domestic SiC silicon carbide MOS tube 650V 30A automotive grade

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASC30N650MF3,ASC30N650MT3,ASC30N650MT4,ASC30N650MT...

ASC60N650, Domestic SiC silicon carbide MOS tube 650V 60A automotive grade

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASC60N650MT3,ASC60N650MT4,ASC60N650MT7,ASR35N650MD...

ASR12N650MD02, Domestic SiC silicon carbide MOS tube 650V 100A TOLL automotive grade

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASR12N650MD02

ASC100N650, Domestic SiC silicon carbide MOS tube 650V 100A TO-247 automotive grade

Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliabilit...

型號：ASC100N650MT3,ASC100N650MT4,ASC100N650MT4PB

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